Effective Band Gap of CdHgTe Heteroepitaxial Structures Grown by Molecular Beam and Liquid Phase Epitaxy

A mathematical model of the band gap of the mercury cadmium telluride ternary solid solutions grown by molecular beam and liquid phase epitaxy has been developed using the data of analysis of a statistical sample of the results of monitoring the spectral characteristics of the sensitivity of photodiodes manufactured at JSC Research and Production Association Orion. The temperature dependence of the long-wavelength sensitivity limit of the photodiodes based on the mercury cadmium telluride structures grown by molecular beam and liquid phase epitaxy has been studied using the derived formulas for the effective band gap. The results are intended to improve the technology of mercury cadmium telluride photodiodes.