Structural and Optical Properties of InAs/GaSb Superlattices Obtained by Molecular Beam Epitaxy

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发表日期：

2024年4月1日

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G. N. Eroshenko,
V. S. Krivobok,
I. I. Minaev,
A. V. Klekovkin,
K. A. Savin,
A. E. Goncharov,
A. V. Muratov,
A. R. Dubovaya,
A. A. Pruchkina,
S. N. Nikolaev

摘要

Abstract

Short-period InAs/GaSb superlattices with elastic stress compensation realized by introducing In(As)Sb interface layers have been obtained on GaSb (100) substrates. The structural perfection of the superlattices and the absence of plastic relaxation were confirmed by X-ray diffraction analysis and atomic force microscopy. Based on reflectance spectra measurements, it is shown that the absorption edge of the superlattice is located in the region of 1000 cm^–1 μm at a temperature of 77 K. The data obtained demonstrates the possibility of using superlattices with interface strain compensation to create far-IR detectors.