Investigation of the Lifetime and Dark Current in Absorbing Layers Based on Ternary Antimony Compounds

The parameters of photodetectors based on photosensitive barrier structures and photodiodes with absorbing layers of InAs_1–xSb_x and In_1–xGa_xSb ternary solutions of the mid-wave infrared spectrum range are studied. Temperature dependences of lifetime and dark current in InAs_1–xSb_x and In_1–xGa_xSb layers have been calculated. The signal-to-noise ratio in the operating temperature range was determined. Parameter modeling has shown that for photodetectors based on InAs_0.8Sb_0.2 with a cutoff wavelength λ_0.5 ∼ 4.8 µm the detectability at T = 100 K will be D* ≈ 10¹² cm W^–1 Hz^1/2; for photodiodes based on In_0.7Ga_0.3Sb with cutoff wavelength λ_0.5 ∼ 5.2 µm the detectability at T = 100 K will be D* ≈ 10¹¹ cm W^–1 Hz^1/2, which is suitable for high temperature applications.