Effect of Oxygen Precipitates on Dark Current of Silicon Photodiodes
摘要
Abstract
Distributions of dark currents, lifetimes of minority carrier, and microdefects revealed by selective etching are compared. The main reason for increased dark currents and decreased photosensitivity in silicon photodiodes fabricated on n-type silicon using the Czochralski method are the generation–recombination processes on fine oxide precipitates.