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Abstract <p>In this study, we report a vertically stacked FTO/NiO/CsPbBr<sub>3</sub>/TPBi/FTO heterostructure that integrates memristive and photodetection functionalities within a single CsPbBr<sub>3</sub> active layer. The asymmetric band alignment between NiO (HTL) and TPBi (ETL) enables controlled migration of bromine vacancies, resulting in stable bipolar resistive switching at low operating voltages along with fast photoresponse. Electrical characterization reveals reproducible SET and RESET transitions under low compliance currents, with a clear resistance window (~10<sup>2</sup>) maintained over multiple cycles, demonstrating excellent endurance and low-energy operation. The photodetection performance under 405 nm illumination exhibits high responsivity (~6.5 A W<sup>–1</sup>), specific detectivity (~4.8 × 10<sup>11</sup> Jones), and external quantum efficiency (~2.0 × 10<sup>4</sup>%), with fast rise and fall times of ~0.10 and ~0.72 ms, respectively. The observed multifunctionality is attributed to the intrinsic coexistence of resistive switching and light-modulated ionic dynamics in CsPbBr<sub>3</sub>, establishing a compact, all-inorganic perovskite platform for “visual memory” and in-sensor neuromorphic processing. These results provide a versatile approach to integrating optical sensing and memory within a single perovskite layer, paving the way for future compact optoelectronic devices for artificial vision systems and neuromorphic optoelectronics.</p>

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Toward Neuromorphic Optoelectronics: CsPbBr3 Nanocrystals Based Memristor–Photodetector Devices

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Long Nguyen-Duc,
  • Tung Duong-Thanh

摘要

Abstract

In this study, we report a vertically stacked FTO/NiO/CsPbBr3/TPBi/FTO heterostructure that integrates memristive and photodetection functionalities within a single CsPbBr3 active layer. The asymmetric band alignment between NiO (HTL) and TPBi (ETL) enables controlled migration of bromine vacancies, resulting in stable bipolar resistive switching at low operating voltages along with fast photoresponse. Electrical characterization reveals reproducible SET and RESET transitions under low compliance currents, with a clear resistance window (~102) maintained over multiple cycles, demonstrating excellent endurance and low-energy operation. The photodetection performance under 405 nm illumination exhibits high responsivity (~6.5 A W–1), specific detectivity (~4.8 × 1011 Jones), and external quantum efficiency (~2.0 × 104%), with fast rise and fall times of ~0.10 and ~0.72 ms, respectively. The observed multifunctionality is attributed to the intrinsic coexistence of resistive switching and light-modulated ionic dynamics in CsPbBr3, establishing a compact, all-inorganic perovskite platform for “visual memory” and in-sensor neuromorphic processing. These results provide a versatile approach to integrating optical sensing and memory within a single perovskite layer, paving the way for future compact optoelectronic devices for artificial vision systems and neuromorphic optoelectronics.