Abstract <p>This study presents a comprehensive analysis aimed at optimizing the various parameters of a Step Channel-based Dual Metal Negative Capacitance Ge-Pocket Double Gate Tunnel Field-Effect Transistor (SCDMNC-HDGTFET). Because the functionality of this device is fundamentally reliant on band to band tunneling, its performance is strongly influenced by structural and material parameters. Accordingly, the effects of channel length (<i>C</i>_L), ferroelectric thickness (<i>t</i>_Fe), pocket length (<i>L</i>_PKT), and source/drain doping concentrations are examined to assess their impact on key metrics such as subthreshold swing, ON/OFF current ratio, and threshold voltage. The investigation identifies an optimal configuration consisting of a 30 nm channel, a 2 nm ferroelectric layer, and a 3 nm pocket length. Performance is further enhanced by employing a source concentration of 4 × 10²⁰ cm^–3 and a drain concentration of 1 × 10¹⁷ cm^–3. Under these optimized conditions, the device achieves an ON/OFF current ratio of ~10¹³ and a minimum subthreshold swing of 18.12 mV/dec. These results underscore the strong potential of the SCDMNC-HDGTFET architecture for highly efficient, low-power electronic applications.</p>