Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology
摘要
Abstract
A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy.