Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

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发表日期：

2024年2月1日

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A. V. Afanasjev,
V. I. Zubkov,
V. A. Ilyin,
V. V. Luchinin,
M. V. Pavlova,
M. F. Panov,
V. V. Trushliakova,
D. D. Firsov

摘要

Abstract

A technique has been developed for frequency analysis of the IR reflection spectrum to determine the thickness and order of the layers in the epitaxial structure of silicon carbide. Calculations for the 4H-SiC epitaxial structure have been performed. The method has been shown to be highly sensitive to optical boundaries resulting from a sequential increase in the doping level during the layer growth.