Amorphization of Silicon Nanowires upon Irradiation with Argon Ions
摘要
Abstract—The irradiation of silicon nanowires with Ar+ ions with the energy of 250 keV and fluences of 1013 to 1016 cm–2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films.