Synthesis of SiC in an Electric Arc Argon Plasma

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发表日期：

2024年11月1日

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E. A. Erlingaite,
N. G. Andreeva,
A. V. El’chishcheva,
R. R. Shaikhattarov,
I. G. Galeev,
B. A. Timerkaev

摘要

Abstract

An experimental setup that consists of a vacuum chamber, vacuum pump, power source, pressure gage to measure the pressure in the chamber, ballast resistor, and gas delivery system has been constructed, and the process of SiC growth in an argon arc discharge has been studied. Appropriate process conditions have been selected, and experiments on SiC synthesis have been carried out in the vacuum chamber in an argon atmosphere at a pressure of 350−500 Torr. The grown material has been examined under optical and scanning electron microscopes. It has been reliably established that the presented approach provides the synthesis of SiC nano- and microparticles with a diamond-like structure.