Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure
摘要
Abstract
The article presents the results of studies of microrelief parameters and electrophysical characteristics of “silicon on insulator” structures after exposure to gamma and gamma neutron radiation. Experimental studies were carried out using the methods of atomic force microscopy and pseudo-MOS transistor. On the basis of the data obtained, an estimate was made of the average size and area of the space charge of clusters of radiation defects.