Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy

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发表日期：

2024年6月1日

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V. V. Andryushkin,
I. I. Novikov,
A. G. Gladyshev,
A. V. Babichev,
L. Ya. Karachinsky,
V. V. Dudelev,
G. S. Sokolovskii,
A. Yu. Egorov

摘要

Abstract

In this paper we present the study of the features of epitaxial growth highly stressed superlattices based on highly stressed thin InGaAs/InAlAs layers on InP substrates by the molecular beam epitaxy. It was shown that the growth rates of the InGaAs and InAlAs bulk layers lattice-matched to InP substrates do not allow us to precisely determine the growth rates of thin highly stressed In_0.36Al_0.64As/In_0.67Ga_0.33As strain compensated superlattices and the error is about 10 percent. The effect is related to the difference in the growth temperatures of InGaAs and InAlAs bulk layers, which affects the intensity of indium evaporation from the growth surface.