Changes of the Crystalline Texture and Resistivity of Ti Films under Ion Bombardment

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发表日期：

2024年5月1日

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R. V. Selyukov,
I. I. Amirov,
M. O. Izyumov,
V. V. Naumov,
L. A. Mazaletskiy

摘要

Abstract

Crystalline texture, microstracture and resistivity of ion irradiated 12–41 nm Ti films are investigated. Ion bombardment was carried out in Ar plasma by applying negative bias 20–30 V to the films. It is found that this treatment leads to the formation of [100] texture in films having initially mixed [100] + [001] texture. The less the film thickness and the higher the bias the less treatment time is required for the [100] texture formation. Ion irradiation of 12 and 22 nm films using bias 30 V leads to the increase of interplanar distances in surface normal direction by 3% and the decrease of film resistivity by 14–20%.