Gradient Layers in a Four-Component Al–Ga–As–Sn System Growth by Liquid-Phase Epitaxy

期刊论文
发表日期：

2024年5月1日

查看全文

N. S. Potapovich,
V. P. Khvostikov,
O. A. Khvostikova,
A. S. Vlasov

摘要

Abstract

The growth of thick (more than 50 μm) Al_xGa_{1 –} _xAs gradient layers in the Al–Ga–As–Sn system has been modeled. Sn-doped Al_xGa_{1 –} _xAs layers up to 85 μm thick were obtained by liquid-phase epitaxy. The obtained experimental profiles of the Al_xGa_{1 –} _xAs composition gradient satisfy the used theoretical model for the cases of growth from a limited volume of a solution–melt.