Investigation of the Angular Dependences of the Velocities of Ion-Beam Sputtering of Metals for the Synthesis of Mask Blanks
摘要
Abstract
An alternative material has been proposed as an absorber for a mask blank for lithography in the vicinity of a wavelength of 11.2 nm—Ni. It has been established in this work that the optimal angle for efficient sputtering of Ru, Be, and Ni targets by accelerated argon ion sources for fabrication of a Ru/Be multilayer structure with an upper Ni layer is an angle of 60°. At this angle, the etching rate for all three materials is 35 ± 5 nm/min at an argon ion energy of 800 eV and an ion current density of 0.5 mA/cm2.