Method for Obtaining Atomically Smooth Substrates from Single-Crystal Silicon by Mechanical Lapping
摘要
Abstract
The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025–65 µm–1 at the level of 0.37 and 0.18 nm at a frame size on the surface of 2 × 2 µm2. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics.