Study of the Influence of the Energy of Argon Ions on the Surface Roughness of the Main Sections of Single-Crystal Silicon
摘要
Abstract
The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200–1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9 × 10–2–6.3 × 101 μm–1 less than 0.3 nm for the main cuts monocrystalline silicon 〈100〉, 〈110〉, and 〈111〉.