Local Anodic Oxidation of Silicon for Create Crossbar Architecture

Paper present possibility of creation a neuromatrix in the form crossbar architecture on a silicon substrate is shown. Crossbar architecture in the form of a set of nanosized conductors, between which there is a layer of titanium oxide, capable of changing its conductivity under the action of the applied voltage, it is proposed to form using the metho d of local anodic oxidation. The results is present of the study technological parameters of the metho d of local anodic oxidation silicon and titanium for the implementation of the elements of this neuromatrix in the form of a memristor structures.