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Abstract <p>InGaN-based red light-emitting diodes (LEDs) face significant challenges due to the quantum-confined Stark effect and efficiency droop. This work numerically investigates five InGaN-based red LED structures (A–E) with different quantum well designs, including rectangular, stepped, and composition-graded profiles. Structure A (rectangular QW) exhibits a peak internal quantum efficiency of 0.534 and severe efficiency droop of 12.4% at 100 A/cm<sup>2</sup>. Structure D (graded QW with 2 nm cap) shows the lowest turn-on voltage of 5.15 V but shifts into the amber spectral range (607–615 nm). Structure E (graded QW with a 1 nm In<sub>0.45</sub>Ga<sub>0.55</sub>N insertion layer) achieves the best overall performance: a peak internal quantum efficiency of 0.656, the lowest efficiency droop of 3.5%, and a wall-plug efficiency of 10.1% at 100 A/cm<sup>2</sup>. Its electroluminescence peak maintains true red emission, shifting from 636 to 622 nm as current density increases from 10&#xa0;to 100 A/cm<sup>2</sup>. The optimized thin graded QW design in Structure E minimizes polarization fields and enhances carrier confinement, offering a nearly four-fold reduction in efficiency droop compared to the rectangular QW. These results provide a clear design guideline for high-efficiency, spectrally stable red InGaN LEDs.</p>

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Impact of Quantum Well Shape on the Efficiency of InGaN-Based Multiple-Quantum-Well Red LEDs

  • 期刊论文

  • 发表日期：

    2026年7月31日

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  • V. P. Sirkeli,
  • S. I. Caragacian,
  • Iu. B. Boris,
  • D. L. Nika

摘要

Abstract

InGaN-based red light-emitting diodes (LEDs) face significant challenges due to the quantum-confined Stark effect and efficiency droop. This work numerically investigates five InGaN-based red LED structures (A–E) with different quantum well designs, including rectangular, stepped, and composition-graded profiles. Structure A (rectangular QW) exhibits a peak internal quantum efficiency of 0.534 and severe efficiency droop of 12.4% at 100 A/cm2. Structure D (graded QW with 2 nm cap) shows the lowest turn-on voltage of 5.15 V but shifts into the amber spectral range (607–615 nm). Structure E (graded QW with a 1 nm In0.45Ga0.55N insertion layer) achieves the best overall performance: a peak internal quantum efficiency of 0.656, the lowest efficiency droop of 3.5%, and a wall-plug efficiency of 10.1% at 100 A/cm2. Its electroluminescence peak maintains true red emission, shifting from 636 to 622 nm as current density increases from 10 to 100 A/cm2. The optimized thin graded QW design in Structure E minimizes polarization fields and enhances carrier confinement, offering a nearly four-fold reduction in efficiency droop compared to the rectangular QW. These results provide a clear design guideline for high-efficiency, spectrally stable red InGaN LEDs.