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Abstract <p>In this study, theoretical analysis of the possibility of efficient green emission from InGaN–InN/GaN quantum well (QW) light-emitting diode (LED) structures employing an ultrathin InN-delta layer is provided. A self-consistent Schrödinger–Poisson approach implemented in MATLAB is used to compute energy states, carrier distributions, and recombination processes. The delta-layer design yields over a 2.5-fold increase in transition probability and an increase in the spontaneous radiative recombination rate by almost a factor of three, as compared to conventional InGaN/GaN QWs, enabling efficient green emission at 2.23&#xa0;eV (λ = 556 nm). Radiative efficiency analysis further confirms a significant optical performance improvement. Moreover, by varying the InN-delta layer thickness from 0 to 10 Å, the emission energy can be tuned from the visible cyan (2.5 eV) to the near-infrared (1.09 eV), with transition probabilities from above 38% up to 54%. These findings establish InN-delta layer engineering as a novel pathway toward high-efficiency, wavelength-flexible InGaN-based light emitters.</p>

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Green Light-Emitting Diodes Based on InGaN/GaN Quantum Wells Incorporating an Ultrathin InN-delta Layer

  • 期刊论文

  • 发表日期：

    2026年6月15日

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  • Anup Gorai

摘要

Abstract

In this study, theoretical analysis of the possibility of efficient green emission from InGaN–InN/GaN quantum well (QW) light-emitting diode (LED) structures employing an ultrathin InN-delta layer is provided. A self-consistent Schrödinger–Poisson approach implemented in MATLAB is used to compute energy states, carrier distributions, and recombination processes. The delta-layer design yields over a 2.5-fold increase in transition probability and an increase in the spontaneous radiative recombination rate by almost a factor of three, as compared to conventional InGaN/GaN QWs, enabling efficient green emission at 2.23 eV (λ = 556 nm). Radiative efficiency analysis further confirms a significant optical performance improvement. Moreover, by varying the InN-delta layer thickness from 0 to 10 Å, the emission energy can be tuned from the visible cyan (2.5 eV) to the near-infrared (1.09 eV), with transition probabilities from above 38% up to 54%. These findings establish InN-delta layer engineering as a novel pathway toward high-efficiency, wavelength-flexible InGaN-based light emitters.