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Abstract <p>This paper presents a detailed comparative analysis of β-Ga<sub>2</sub>O<sub>3</sub>-buffered Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN high electron mobility transistors (HEMTs) incorporating two distinct back barrier configurations: In<sub>0.15</sub>Ga<sub>0.85</sub>N and a unified β-Ga<sub>2</sub>O<sub>3</sub> layer. The devices are evaluated under two gate metal work functions (ϕₘ = 4.3  and 5.6  eV) to examine their influence on device performance. DC and RF characteristics, including drain current (<i>I</i><sub>D</sub>), transconductance (<i>g</i>ₘ), and unity current gain cutoff frequency (&#xa0;<i>f</i><sub>T</sub>), are extracted at a drain bias of 20  V. The β-Ga<sub>2</sub>O<sub>3</sub> back barrier device demonstrates superior performance, achieving higher peak drain current densities of 6  A/mm (ϕₘ = 4.3  eV) and 5.63  A/mm (ϕₘ = 5.6  eV), compared to 3.9  and 3.6  A/mm, respectively, for the InGaN counterpart. A significant shift in threshold voltage (<i>V</i><sub>th</sub>) is observed with the β‑Ga<sub>2</sub>O<sub>3</sub> barrier, indicating enhanced channel control. Moreover, transconductance values exceeded 1 &#xa0;S/mm, and peak <i>f</i><sub>T</sub> values approached 1.45 × 10<sup>11</sup>  Hz, underscoring the advantages of β-Ga<sub>2</sub>O<sub>3</sub> in high‑speed applications. The ON-resistance (<i>R</i><sub>on</sub>) analysis shows that the β-Ga<sub>2</sub>O<sub>3</sub> back barrier device achieved a minimum <i>R</i><sub>on</sub> of 0.28 Ω mm (ϕₘ = 4.3  eV), compared to 0.55  Ω mm for the InGaN back barrier. The results establish that both the gate work function and back barrier selection critically impact the electron confinement, threshold behavior, and high-frequency response of GaN-based HEMTs on β-Ga<sub>2</sub>O<sub>3</sub> substrates.</p>

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Comparative Analysis of In0.15Ga0.85N and β-Ga2O3 Back Barriers in β-Ga2O3-Buffered AlGaN/GaN HEMT Structures for High-Speed RF Electronics

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • K. Ferents Koni Jiavana,
  • J. K. Kasthuri Bha,
  • S. Kayalvizhi,
  • Ramkumar Natarajan

摘要

Abstract

This paper presents a detailed comparative analysis of β-Ga2O3-buffered Al0.25Ga0.75N/GaN high electron mobility transistors (HEMTs) incorporating two distinct back barrier configurations: In0.15Ga0.85N and a unified β-Ga2O3 layer. The devices are evaluated under two gate metal work functions (ϕₘ = 4.3  and 5.6  eV) to examine their influence on device performance. DC and RF characteristics, including drain current (ID), transconductance (gₘ), and unity current gain cutoff frequency ( fT), are extracted at a drain bias of 20  V. The β-Ga2O3 back barrier device demonstrates superior performance, achieving higher peak drain current densities of 6  A/mm (ϕₘ = 4.3  eV) and 5.63  A/mm (ϕₘ = 5.6  eV), compared to 3.9  and 3.6  A/mm, respectively, for the InGaN counterpart. A significant shift in threshold voltage (Vth) is observed with the β‑Ga2O3 barrier, indicating enhanced channel control. Moreover, transconductance values exceeded 1  S/mm, and peak fT values approached 1.45 × 1011  Hz, underscoring the advantages of β-Ga2O3 in high‑speed applications. The ON-resistance (Ron) analysis shows that the β-Ga2O3 back barrier device achieved a minimum Ron of 0.28 Ω mm (ϕₘ = 4.3  eV), compared to 0.55  Ω mm for the InGaN back barrier. The results establish that both the gate work function and back barrier selection critically impact the electron confinement, threshold behavior, and high-frequency response of GaN-based HEMTs on β-Ga2O3 substrates.