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Abstract <p>In this study, we propose an efficient strategy to improve the electrical properties of <i>n</i>-type tin selenide (SnSe) thin films by isovalent zinc (Zn) doping. The Zn-doped film constructed a network structure of crisscrossed SnSe nanosheets as origami to promote charge transport. Structural studies showed that Zn&#xa0;incorporation slightly enlarged the lattice and decreased the indirect bandgap from 0.95 eV in the undoped films to 0.79 eV in the Zn-doped samples. The Hall and Seebeck measurements at room temperature (RT) indicated <i>n</i>-type conduction of undoped and Zn-doped films. In contrast, the undoped films exhibited space-charge-limited current (SCLC) owing to deep trap states and weak nanosheet connectivity, whereas Zn&#xa0;doping restored ohmic conduction via enhanced carrier concentrations and improved nanosheet junctions. Collectively, this work demonstrates how isovalent Zn doping can suppress structural defects and activate improved electrical transport in SnSe thin films, thereby making them more suitable for future thermoelectric and optoelectronic applications.</p>

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Effect of Isovalent Zn-Doping on Electrical Conductivity in SnSe Thin Films

  • 期刊论文

  • 发表日期：

    2026年6月15日

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  • Manisha Yadav,
  • Vishal Singh,
  • Balaji Rao Ravuri,
  • Sanjeev K. Sharma,
  • Archana Jayaram,
  • Navaneethan Muthu,
  • Meetu Bharti,
  • Ajay Singh,
  • Vijay Singh

摘要

Abstract

In this study, we propose an efficient strategy to improve the electrical properties of n-type tin selenide (SnSe) thin films by isovalent zinc (Zn) doping. The Zn-doped film constructed a network structure of crisscrossed SnSe nanosheets as origami to promote charge transport. Structural studies showed that Zn incorporation slightly enlarged the lattice and decreased the indirect bandgap from 0.95 eV in the undoped films to 0.79 eV in the Zn-doped samples. The Hall and Seebeck measurements at room temperature (RT) indicated n-type conduction of undoped and Zn-doped films. In contrast, the undoped films exhibited space-charge-limited current (SCLC) owing to deep trap states and weak nanosheet connectivity, whereas Zn doping restored ohmic conduction via enhanced carrier concentrations and improved nanosheet junctions. Collectively, this work demonstrates how isovalent Zn doping can suppress structural defects and activate improved electrical transport in SnSe thin films, thereby making them more suitable for future thermoelectric and optoelectronic applications.