Scholarlink

Abstract <p>The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance&#xa0;and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 10<sup>14</sup>, in contrast to the Si-based TFET (~10<sup>11</sup>) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Performance Evaluation and Thermal Stability Assessment of Graphene Nanoribbon Doped Dielectrically Modulated Tunnel Field Effect Transistor

  • 期刊论文

  • 发表日期：

    2025年8月11日

查看全文
  • Sushroot,
  • Vedvrat,
  • Shrish Bajpai,
  • Syed Hasan Saeed

摘要

Abstract

The performance of Dual Material Heterodielectric Graphene Nanoribbon channel tunnel FET (DM-H-GNR-TFET) and TFETs based on Silicon (DM-H-Si-TFET and DM-Si-TFET) are compared in this work. The narrow bandgap, higher carrier mobility, and fast saturation velocity of the two-dimensional material GNR have led to its proposal as a channel material to improve device performance. This analysis of the proposed structure’s DC, RF, performance and thermal stability has been conducted. The GNR-based channel TFET demonstrates a higher current ratio of the order of 1014, in contrast to the Si-based TFET (~1011) with improved subthreshold swing. This investigation encompasses the influence of temperature on the DC parameters, in addition to the analog/RF figures of merit for the proposed structure. Moreover, the results are compared with existing literature on TFETs, revealing that DM-H-GNR-TFET excels Si-based TFETs and other variants.