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Abstract <p>Zn-doped NiFe<sub>2</sub>O<sub>4</sub> was synthesized by using sol–gel citrate technique, and its phase homogeneity, surface morphology, optical, magnetic, and electrochemical performance were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with <i>Fd</i>3<i>m</i> space group symmetry. Field emission scanning electron microscopy (FE-SEM) revealed increasing agglomeration with Zn doping. Magnetic characterization via vibrating sample magnetometer (VSM) showed an increase in saturation magnetization with Zn content, specifying its soft magnetic behavior. UV-visible spectroscopy revealed an increase in bandgap energy from 1.7 to 3.89 eV with Zn doping. Current–voltage characteristics and voltage–time cycling data showed best conductivity for Zn composition <i>x</i> = 0.1. Impedance spectroscopy further indicated that charge transfer resistance was lowest for <i>x</i> = 0.1, measuring 50.23 Ω.</p>

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Exploring the Multifunctional Properties of Ni1–xZnxFe2O4 (x = 0, 0.1, 0.2, and 0.3) Ferrites Synthesized by Sol–Gel Citrate Approach

  • 期刊论文

  • 发表日期：

    2025年5月12日

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  • A. Sen,
  • S. Paul,
  • S. Rialach,
  • K. Shaheen,
  • S. Prerna,
  • Manokamna,
  • P. Sharma,
  • G. Bhargava

摘要

Abstract

Zn-doped NiFe2O4 was synthesized by using sol–gel citrate technique, and its phase homogeneity, surface morphology, optical, magnetic, and electrochemical performance were analyzed. X-ray diffraction (XRD) confirmed a cubic spinel structure with Fd3m space group symmetry. Field emission scanning electron microscopy (FE-SEM) revealed increasing agglomeration with Zn doping. Magnetic characterization via vibrating sample magnetometer (VSM) showed an increase in saturation magnetization with Zn content, specifying its soft magnetic behavior. UV-visible spectroscopy revealed an increase in bandgap energy from 1.7 to 3.89 eV with Zn doping. Current–voltage characteristics and voltage–time cycling data showed best conductivity for Zn composition x = 0.1. Impedance spectroscopy further indicated that charge transfer resistance was lowest for x = 0.1, measuring 50.23 Ω.