Abstract
Thickness dependent charge transport mechanism in organic semiconductors has been demonstrated. Material layer thickness of simulated device structures has been considered for different values to verify the trap signatures by introducing different estimation process. A theoretical model has been proposed to form a reliable relationship between thickness dependent trap energy and ideality factor in terms of incremental conductance from which \(\alpha \) has been calculated for different experimental dye based experimental devices. Investigation reveals significant similarity shown in logarithmic plot of the abovementioned parameters consistent with proposed theoretical model. Using the approximated theoretical observation following the further modification of Space Charge Limited Current equation, thickness dependent charge mobility has been estimated for different layer thickness of OSC device. The obtained result in this context shows good agreement with defined standard value of simulation. Electrical parameters relevant to thickness dependent charge transition process and their variation with device layer thickness has also been extrapolated. It has been observed that trapping states induced charge density decreases at trap filled high voltage regime with increasing layer thickness while subsequently impact of trap energy enhances in this perspective.
