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Abstract <p>Thin films of nanocrystalline zinc oxide (nc-ZnO) have been deposited onto silicon substrates through a sol–gel route followed by annealing at 900°C, and subsequently develop a zinc–silicate layer at the ZnO–Si interface. The above interlayer was removed successfully after irradiation with 120 MeV Ag ions at different fluences of 5 × 10<sup>12</sup>, 1 × 10<sup>13</sup>, and 3 × 10<sup>13</sup> ions/cm<sup>2</sup>. Glancing angle X-ray diffraction (GAXRD) confirmed increased crystallinity, especially the stronger (002) peak at higher fluences. Fourier transform infrared (FTIR) spectra gave an indication of the disappearance of the Si–O–Zn vibration and zinc silicate phase after irradiation, thus confirming a successful removal of the unwanted interlayer through ion treatment.</p>

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Impact of Swift Heavy Ion Irradiation on Nano Zinc Silicate Decomposition at the ZnO–Si Junction

  • 期刊论文

  • 发表日期：

    2025年1月1日

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  • Sanjeev Kumar,
  • Amit Jain,
  • Manohar Singh

摘要

Abstract

Thin films of nanocrystalline zinc oxide (nc-ZnO) have been deposited onto silicon substrates through a sol–gel route followed by annealing at 900°C, and subsequently develop a zinc–silicate layer at the ZnO–Si interface. The above interlayer was removed successfully after irradiation with 120 MeV Ag ions at different fluences of 5 × 1012, 1 × 1013, and 3 × 1013 ions/cm2. Glancing angle X-ray diffraction (GAXRD) confirmed increased crystallinity, especially the stronger (002) peak at higher fluences. Fourier transform infrared (FTIR) spectra gave an indication of the disappearance of the Si–O–Zn vibration and zinc silicate phase after irradiation, thus confirming a successful removal of the unwanted interlayer through ion treatment.