Thin ZnTe:Cu Films Fabricated by Pulse Laser Deposition
摘要
Abstract
Thin ZnTe:Cu films are prepared by pulse laser deposition. ZnTe films were doped with Cu to increase the p type carrier concentration and to state the influence of the Cu concentration on their structural, optical, and electrical properties and also to consider their potential applications in electronic devices. X-ray diffraction studies, studies of X-ray photoelectron spectroscopy, UV-visible spectroscopy, and the Hall effect of ZnTe:Cu films are performed.