TCAD Design of Deep-Ultraviolet LED Based on ZnO/AlGaN Multiple Quantum Wells with Tunable Wavelength

Multiple quantum-wells light-emitting diodes (MQWs-LEDs) are high-performance electroluminescent light sources, which is widely used in solid state lighting, medical, industrial and other fields. Understanding the light emission origin and mechanisms of MQWs-LEDs is crucial for their practical applications. Here, we show the excellent ultraviolet (UV) and deep-ultraviolet (DUV) emissions from ZnO/AlGaN MQWs-LEDs using Technology Computer Aided Design (TCAD) simulation, which deviates from the typical ZnO heterojunction LEDs. The adjustment of the structural parameters of the MQWs was performed to control the emission wavelength in the range of 335–366 nm. After parameter optimization, 342.6–348.7 nm DUV EL from ZnO/AlGaN MQWs is obtained successfully. The deconvolution analysis of the EL spectra was conducted to investigate the origin of the emissions. The results indicate that the structural parameter operation-induced emission blue-shift results from the quantum confinement effect. This work provides new references for designing ZnO-based MQWs and preparing new DUV LEDs.