Optimization of Spin-Polarized Current Induced Domain Wall Velocity in a Magnetic Nano Stripe Using Sinc Pulse—A Computational Study
摘要
Domain wall propagation and domain wall structure in spin dynamics play a crucial role in the development of new efficient memory devices. A transverse domain wall in the finite straight permalloy nanostrip has been investigated by applying the different normalized sinc current pulses and observing its motion. In addition, it has been observed that domain wall velocity gradually increases with the increase of the pulse period of the sinc pulse current. Furthermore, the pulse scale plays another crucial role in improving the domain wall velocity. Domain Wall velocity can be increased again by changing the non-adiabatic parameter. This study has successfully found the optimal values of the non-adiabatic parameter β and a scaler factor k that can be multiplied to pulse scale resulting in the highest domain wall velocity in particularly low current. It significantly established another control mechanism on the domain wall by varying the pulse scale and pulse period of the sinc pulse current. The present work shows that domain wall motion inside magnetic nano strips may be controlled with high efficiency and reliability using spin-polarized current pulse by solving the LLG equation and the object oriented micromagnetic framework (OOMMF) simulator. The development of racetrack memory technologies with enhanced data storing capacity will be significantly impacted by this study.