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Abstract <p>In this paper, a normally off high-electron-mobility transistor (HEMT) incorporating a recessed <i>p</i>-GaN gate and a buried <i>p</i>-GaN region is proposed and investigated using Silvaco TCAD simulations. The two <i>p</i>-GaN regions located above and below the channel enhance the depletion of the two-dimensional electron gas (2DEG) in the channel, resulting in a threshold voltage (<i>V</i><sub>th</sub>) of 4.5 V. In the ON state, effective electrostatic modulation and improved gate control over the channel enable a drain current (<i>I</i><sub>d</sub>) of 1 A/mm and transconductance (<i>g</i><sub>m</sub>) of 443 mS/mm, demonstrating competitive performance compared to recently reported enhancement-mode (<i>e</i>-mode) HEMTs. The device exhibits a low ON-resistance (<i>R</i><sub>on</sub>) of 5.1 Ω.mm and a low sub-threshold swing (<i>SS</i>) of 78 mV/dec, indicating favorable performance for power electronics and radio-frequency (RF) switching applications. Moreover, the proposed HEMT employs a highly resistive buffer layer, which effectively reduces the leakage current components and improves the ON-OFF current ratio (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub>). Overall, the proposed HEMT structure demonstrates an improved <i>V</i><sub>th</sub>–<i>I</i><sub>d</sub> trade-off compared to several recently reported enhancement-mode HEMT designs.</p>

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Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications

  • 期刊论文

  • 发表日期：

    2026年5月5日

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  • H. Bhattacharjee,
  • J. Chowdhury,
  • A. Dey,
  • Preetisudha Meher

摘要

Abstract

In this paper, a normally off high-electron-mobility transistor (HEMT) incorporating a recessed p-GaN gate and a buried p-GaN region is proposed and investigated using Silvaco TCAD simulations. The two p-GaN regions located above and below the channel enhance the depletion of the two-dimensional electron gas (2DEG) in the channel, resulting in a threshold voltage (Vth) of 4.5 V. In the ON state, effective electrostatic modulation and improved gate control over the channel enable a drain current (Id) of 1 A/mm and transconductance (gm) of 443 mS/mm, demonstrating competitive performance compared to recently reported enhancement-mode (e-mode) HEMTs. The device exhibits a low ON-resistance (Ron) of 5.1 Ω.mm and a low sub-threshold swing (SS) of 78 mV/dec, indicating favorable performance for power electronics and radio-frequency (RF) switching applications. Moreover, the proposed HEMT employs a highly resistive buffer layer, which effectively reduces the leakage current components and improves the ON-OFF current ratio (Ion/Ioff). Overall, the proposed HEMT structure demonstrates an improved Vth–Id trade-off compared to several recently reported enhancement-mode HEMT designs.