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Abstract <p>This study proposes an enhancement-mode high electron mobility transistor (HEMT) with a six-region graded Al<sub>0.25</sub>Ga<sub>0.75</sub>N barrier layer, divided into three lateral and two vertical segments with varying Al compositions. To mitigate increased gate leakage from reduced Al content under the gate, an InGaN layer is inserted into the <i>p</i>-GaN cap to form a GaN/InGaN double quantum well (DQW), suppressing leakage. However, the reverse piezoelectric polarization at the GaN/InGaN interface reduces saturation current, which is compensated by N-well buried layers in the channel. Compared to conventional AlGaN/GaN HEMTs, the optimized device achieves a 13.7% higher saturation current (<i>I</i><sub>sat</sub> = 1657.5 mA/mm), 27% higher threshold voltage (<i>V</i><sub>th</sub> = 4.2 V), and 22.1% lower gate leakage (1.92 × 10<sup>−4</sup> A/mm).</p>

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Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps

  • 期刊论文

  • 发表日期：

    2026年5月5日

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  • Xiang-Yu Liu,
  • Li-E Cai,
  • Yi-Fei Chen,
  • Zhi-Yu Ma,
  • Da Feng,
  • Hai-Feng Lin,
  • Chuan-Tao Sun,
  • Cheng Zai-Jun,
  • Lin Hai-Feng,
  • Rong-Sheng Zheng

摘要

Abstract

This study proposes an enhancement-mode high electron mobility transistor (HEMT) with a six-region graded Al0.25Ga0.75N barrier layer, divided into three lateral and two vertical segments with varying Al compositions. To mitigate increased gate leakage from reduced Al content under the gate, an InGaN layer is inserted into the p-GaN cap to form a GaN/InGaN double quantum well (DQW), suppressing leakage. However, the reverse piezoelectric polarization at the GaN/InGaN interface reduces saturation current, which is compensated by N-well buried layers in the channel. Compared to conventional AlGaN/GaN HEMTs, the optimized device achieves a 13.7% higher saturation current (Isat = 1657.5 mA/mm), 27% higher threshold voltage (Vth = 4.2 V), and 22.1% lower gate leakage (1.92 × 10−4 A/mm).