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Abstract <p>This work presents a detailed Sentaurus TCAD investigative study on a co-design technique integrating a GaN cap layer (<i>G</i><sub><i>c</i>ap</sub>) and a gate field plate (FP) in AlGaN/GaN high electron mobility transistors (HEMTs). Seven device structures, ranging from a baseline (without <i>G</i><sub>cap</sub>–FP) to various <i>G</i><sub>cap</sub>–FP combinations, are analyzed to optimize performance for RF and high-power applications. The optimized device (<i>G</i><sub>cap3/FP3</sub>) demonstrates a maximum <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 3.97 × 10<sup>8</sup>, a breakdown voltage (VBR) of 935 V, and a&#xa0;Johnson’s figure of merit (JFoM) of 532.95 MHz·V, indicating excellent high-voltage and low-leakage characteristics. However, this configuration exhibits trade-offs in transconductance. The observed RF metrics namely, a cutoff frequency (<i>f</i><sub>t</sub>) of 0.57 GHz, and a maximum frequency (<i>f</i><sub>max</sub>) of&#xa0; 0.66 GHz, validates the effectiveness of <i>G</i><sub>cap</sub>–FP co-design in enhancing performance of AlGaN/GaN HEMTs in next-generation RF and power switching applications.</p>

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Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design

  • 期刊论文

  • 发表日期：

    2025年11月12日

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  • Ellapu Bhanu Prakash,
  • Anil Prasad Dadi,
  • Vijay Maitra,
  • Tathagata Ghose,
  • Pranjal Barman,
  • Ashok Ray,
  • Sushanta Bordoloi

摘要

Abstract

This work presents a detailed Sentaurus TCAD investigative study on a co-design technique integrating a GaN cap layer (Gcap) and a gate field plate (FP) in AlGaN/GaN high electron mobility transistors (HEMTs). Seven device structures, ranging from a baseline (without Gcap–FP) to various Gcap–FP combinations, are analyzed to optimize performance for RF and high-power applications. The optimized device (Gcap3/FP3) demonstrates a maximum Ion/Ioff ratio of 3.97 × 108, a breakdown voltage (VBR) of 935 V, and a Johnson’s figure of merit (JFoM) of 532.95 MHz·V, indicating excellent high-voltage and low-leakage characteristics. However, this configuration exhibits trade-offs in transconductance. The observed RF metrics namely, a cutoff frequency (ft) of 0.57 GHz, and a maximum frequency (fmax) of  0.66 GHz, validates the effectiveness of Gcap–FP co-design in enhancing performance of AlGaN/GaN HEMTs in next-generation RF and power switching applications.