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Abstract <p>This paper proposes a polarization-graded AlGaN back barrier to improve the direct current and RF performance of GaN-based High Electron Mobility Transistors (HEMTs). The device structure integrates a Silicon Carbide (SiC) substrate, a T-gate configuration, and a graded AlGaN back barrier. Sentaurus TCAD simulations are employed to analyze both graded and non-graded structures. For <i>L</i><sub>G</sub> = 0.3 µm, the maximum drain current (<i>I</i><sub>Dmax</sub>) increases from 1.14 A/mm in the Non-graded case to 1.44 A/mm in the Graded structure. Similarly, transconductance (<i>g</i><sub>m</sub>) improves from 175.46 to 191.04 mS/mm, cutoff frequency (<i>F</i><sub>T</sub>) increases from 219.26 to 272.92 GHz, and maximum oscillation frequency (<i>F</i><sub>max</sub>) rises from 221.31 to 279.8&#xa0;GHz. These improvements demonstrate that combining a SiC substrate, a T-gate, and a graded AlGaN back barrier enhances device performance, offering strong potential for next-generation high-frequency and high-power applications.</p>

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Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications

  • 期刊论文

  • 发表日期：

    2025年11月12日

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  • B. Mohan,
  • J. Charles Pravin,
  • V. Sandeep

摘要

Abstract

This paper proposes a polarization-graded AlGaN back barrier to improve the direct current and RF performance of GaN-based High Electron Mobility Transistors (HEMTs). The device structure integrates a Silicon Carbide (SiC) substrate, a T-gate configuration, and a graded AlGaN back barrier. Sentaurus TCAD simulations are employed to analyze both graded and non-graded structures. For LG = 0.3 µm, the maximum drain current (IDmax) increases from 1.14 A/mm in the Non-graded case to 1.44 A/mm in the Graded structure. Similarly, transconductance (gm) improves from 175.46 to 191.04 mS/mm, cutoff frequency (FT) increases from 219.26 to 272.92 GHz, and maximum oscillation frequency (Fmax) rises from 221.31 to 279.8 GHz. These improvements demonstrate that combining a SiC substrate, a T-gate, and a graded AlGaN back barrier enhances device performance, offering strong potential for next-generation high-frequency and high-power applications.