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Abstract— <p>AlGaN/GaN-based high electron mobility transistor (HEMT) with a T-gate field plate (FP) structure is proposed for high power applications. Analysis of breakdown voltage (<i>V</i><sub>br</sub>) characteristics, analog and RF (Radio-frequency) properties of the proposed structure, is carried out to evaluate the device’s performance potential. Additionally, the structure is analyzed using various high-k materials in the passivation layer to enhance device performance. As the passivation layer’s relative permittivity rises, the <i>V</i><sub>br</sub> gets better. However, as the <i>V</i><sub>br</sub> rises, the cut-off frequency (<i>f</i><sub>T</sub>) deteriorates. Short Channel Effects (SCEs) such as drain induced barrier lowering (DIBL) and subthreshold swing (SS), along with analog and RF figures of merit (FOMs) such as early voltage (<i>V</i><sub>EA</sub>), intrinsic gain (<i>A</i><sub>V</sub>), gain transconductance frequency product (GTFP), transconductance frequency product (TFP), and gain frequency product (GFP), are studied by changing the passivation material. Owing to its elevated transconductance (<i>g</i><sub>m</sub>) and high <i>f</i><sub>T</sub>, SiO<sub>2</sub> passivated T-gate FP AlGaN/GaN HEMT provides improved GFP and TFP performance compared to other high-k materials. The highest <i>V</i><sub>br</sub> of 751 V is achieved in La<sub>2</sub>O<sub>3</sub> passivated T-gate field plate (FP) AlGaN/GaN HEMTs. Maximum <i>f</i><sub>T</sub> of 38.72 GHz is obtained in the SiO<sub>2</sub> passivated structure. The resulting device has an improved drain current of 1.887 A/mm and <i>g</i><sub>m</sub> of 613 mS/mm. These findings demonstrate the suitability of the T-gate FP AlGaN/GaN HEMT suggested structure for high-power applications.</p>

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Breakdown Voltage Improvement and RF Analysis of T-gate AlGaN/GaN HEMTs with Various High-k Passivation Materials

  • 期刊论文

  • 发表日期：

    2025年10月12日

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  • Pichingla Kharei,
  • Achinta Baidya,
  • Niladri Pratap Maity,
  • Reshmi Maity

摘要

Abstract—

AlGaN/GaN-based high electron mobility transistor (HEMT) with a T-gate field plate (FP) structure is proposed for high power applications. Analysis of breakdown voltage (Vbr) characteristics, analog and RF (Radio-frequency) properties of the proposed structure, is carried out to evaluate the device’s performance potential. Additionally, the structure is analyzed using various high-k materials in the passivation layer to enhance device performance. As the passivation layer’s relative permittivity rises, the Vbr gets better. However, as the Vbr rises, the cut-off frequency (fT) deteriorates. Short Channel Effects (SCEs) such as drain induced barrier lowering (DIBL) and subthreshold swing (SS), along with analog and RF figures of merit (FOMs) such as early voltage (VEA), intrinsic gain (AV), gain transconductance frequency product (GTFP), transconductance frequency product (TFP), and gain frequency product (GFP), are studied by changing the passivation material. Owing to its elevated transconductance (gm) and high fT, SiO2 passivated T-gate FP AlGaN/GaN HEMT provides improved GFP and TFP performance compared to other high-k materials. The highest Vbr of 751 V is achieved in La2O3 passivated T-gate field plate (FP) AlGaN/GaN HEMTs. Maximum fT of 38.72 GHz is obtained in the SiO2 passivated structure. The resulting device has an improved drain current of 1.887 A/mm and gm of 613 mS/mm. These findings demonstrate the suitability of the T-gate FP AlGaN/GaN HEMT suggested structure for high-power applications.