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Abstract <p>Solid solutions (Ge<sub>2</sub>)<sub>1 –</sub> <sub><i>x</i></sub>(GaAs)<sub><i>x</i></sub> were obtained from lead and bismuth solution-melt at crystallization onset temperatures in the range, respectively, 860–760°C (Pb), 650–600°C (Bi). The cooling rate of the melt solution was 1–1.5 K/minute. Single-crystal GaAs substrates with (100) orientation, <i>n</i>-type conductivity, and deviation from the plane not exceeding 15'–30' were used as substrates. The concentration of charge carriers and the concentration of acceptor centers were determined. The mechanism has been established to influence the relaxation time of charge carriers on impurity and dislocation centers in the film.</p>

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Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions

  • 期刊论文

  • 发表日期：

    2025年8月14日

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  • Alijon Razzokov,
  • Amin Saidov,
  • Durdona Koshchanova,
  • Jaloladdin Razzakov,
  • Rozika Otajonova

摘要

Abstract

Solid solutions (Ge2)1 – x(GaAs)x were obtained from lead and bismuth solution-melt at crystallization onset temperatures in the range, respectively, 860–760°C (Pb), 650–600°C (Bi). The cooling rate of the melt solution was 1–1.5 K/minute. Single-crystal GaAs substrates with (100) orientation, n-type conductivity, and deviation from the plane not exceeding 15'–30' were used as substrates. The concentration of charge carriers and the concentration of acceptor centers were determined. The mechanism has been established to influence the relaxation time of charge carriers on impurity and dislocation centers in the film.