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Abstract <p>The ringFET is designed by transforming a conventional bulk metal-oxide semiconductor field-effect transistor (MOSFET) through vertical rotation and replacing its traditional gate with a ring-shaped structure that encircles the source and drain regions. The reconfigurable-ring field-effect transistor (R-ringFET) builds upon this concept by integrating the principles of reconfigurable FET technologies into the ring field-effect transistor (ringFET) structure. Various mitigation strategies are employed to enhance radiation tolerance, including the use of stacked gates and different gate oxide materials. Among these methods, the R-ringFET outperforms the conventional ringFET in harsh radiation environments. Furthermore, implementing mitigation strategies in the R-ringFET proves to be more effective than in a conventional ringFET. The R-ringFET with stacked gate structures is more robust and radiation resilient than those that use SiO<sub>2</sub> or HfO<sub>2</sub> gate oxides. This highlights the effectiveness of the innovative stacked gate design in a radiation-tolerant environment.</p>

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Strategies for Mitigating Radiation Effects on ringFET and Reconfigurable ringFET Devices

  • 期刊论文

  • 发表日期：

    2025年10月12日

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  • Ramya Mohan,
  • Nagarajan Krishnan Kothalam,
  • Bino Wesley Ramakrishnan

摘要

Abstract

The ringFET is designed by transforming a conventional bulk metal-oxide semiconductor field-effect transistor (MOSFET) through vertical rotation and replacing its traditional gate with a ring-shaped structure that encircles the source and drain regions. The reconfigurable-ring field-effect transistor (R-ringFET) builds upon this concept by integrating the principles of reconfigurable FET technologies into the ring field-effect transistor (ringFET) structure. Various mitigation strategies are employed to enhance radiation tolerance, including the use of stacked gates and different gate oxide materials. Among these methods, the R-ringFET outperforms the conventional ringFET in harsh radiation environments. Furthermore, implementing mitigation strategies in the R-ringFET proves to be more effective than in a conventional ringFET. The R-ringFET with stacked gate structures is more robust and radiation resilient than those that use SiO2 or HfO2 gate oxides. This highlights the effectiveness of the innovative stacked gate design in a radiation-tolerant environment.