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Abstract <p>In order to evaluate the anti-magnetic-field interference ability of silicon-based electronic components, this work takes two types of commercial silicon-based diodes, i.e., the <i>p</i>-<i>n</i> diode (1N4148 model as an example) and Schottky diode (DSK26 model as an example), as the main research objects. Firstly, we systematically study the evolution of the current-voltage characteristics of the two types of silicon-based diodes under 1 T external magnetic fields at room temperature. Based on the fitting results of Schottky transport theory and the analysis of magnetoresistance effect theory, we have determined that the ideality factors, reverse saturation current density, and resistance of these two types of diodes exhibit significantly different evolution patterns with the applied magnetic field. The corresponding performance parameters of these two diodes are compared and discussed. In addition, we studied the resistance evolution of the 1N4148 <i>p</i>-<i>n</i> diode under the 32 T pulsed high magnetic field. We found that the resistance of the bipolar-driven device increases with the increase of the magnetic field strength. The resistance of the <i>p</i>-<i>n</i> diode increases from about 630 Ω @ 1 mA and 77 Ω @ 10 mA under zero magnetic field to 740 Ω @ 1 mA and 95 Ω @ 10 mA under 32 T, respectively. This indicates that the high magnetic field has limited emphasis on the ratio of electron concentration to hole concentration in the space charge region of the intrinsic bipolar transport device. The results of this work will provide an important reference for the resistance of semiconductor silicon-based electronic components to external magnetic field interference.</p>

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Evaluation and Analysis of the Anti-Magnetic-Field Interference Ability of Si-based Diodes

  • 期刊论文

  • 发表日期：

    2025年8月14日

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  • Xiong He,
  • ZiZhuo Nie,
  • ZiLiang Huang,
  • Ling Cai,
  • BoYan Duan,
  • LiQing Pan

摘要

Abstract

In order to evaluate the anti-magnetic-field interference ability of silicon-based electronic components, this work takes two types of commercial silicon-based diodes, i.e., the p-n diode (1N4148 model as an example) and Schottky diode (DSK26 model as an example), as the main research objects. Firstly, we systematically study the evolution of the current-voltage characteristics of the two types of silicon-based diodes under 1 T external magnetic fields at room temperature. Based on the fitting results of Schottky transport theory and the analysis of magnetoresistance effect theory, we have determined that the ideality factors, reverse saturation current density, and resistance of these two types of diodes exhibit significantly different evolution patterns with the applied magnetic field. The corresponding performance parameters of these two diodes are compared and discussed. In addition, we studied the resistance evolution of the 1N4148 p-n diode under the 32 T pulsed high magnetic field. We found that the resistance of the bipolar-driven device increases with the increase of the magnetic field strength. The resistance of the p-n diode increases from about 630 Ω @ 1 mA and 77 Ω @ 10 mA under zero magnetic field to 740 Ω @ 1 mA and 95 Ω @ 10 mA under 32 T, respectively. This indicates that the high magnetic field has limited emphasis on the ratio of electron concentration to hole concentration in the space charge region of the intrinsic bipolar transport device. The results of this work will provide an important reference for the resistance of semiconductor silicon-based electronic components to external magnetic field interference.