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Abstract <p>This paper investigates the direct current (DC) and radio frequency (RF) performance of a double-gate tunnel field-effect transistor (DG-TFET) featuring a Si<sub>1 –</sub> <sub><i>x</i></sub>Ge<sub><i>x</i></sub> source, source pocket (SP), and hetero-dielectric gate stack (Hafnium dioxide/Silicon dioxide (HfO<sub>2</sub>/SiO<sub>2</sub>)). Using Sentaurus technology computer-aided design (TCAD) simulations, the impact of varying the germanium (Ge) mole fraction (<i>x</i> = 0, 0.2, 0.4, 0.6, and 1) of Silicon<sub>1 –</sub> <sub><i>x</i></sub>Germanium<sub><i>x</i></sub> (Si<sub>1 –</sub> <sub><i>x</i></sub>Ge<sub><i>x</i></sub>) material in the source region was analyzed. Results reveal that increasing Ge content enhances band-to-band tunneling (BTBT) by reducing the source bandgap, which significantly improves device characteristics. The on-current (<i>I</i><sub>on</sub>) increases by 4.8 times, threshold voltage (<i>V</i><sub>th</sub>) decreases by 22%, and the sub-threshold slope (SS) remains below the 60 mV/decade limit. Additionally, higher Ge mole fractions yield notable improvements in transconductance (<i>g</i>ₘ), output conductance (<i>g</i><sub>ds</sub>), and frequency metrics, with the cut-off frequency (<i>f</i><sub>T</sub>) increasing by 2.2 times, and the maximum oscillation frequency (<i>f</i><sub>max</sub>) by 55%. These results demonstrate that the proposed Si<sub>1 –</sub> <sub><i>x</i></sub>Ge<sub><i>x</i></sub> DG-TFET is a strong candidate for energy-efficient, high-speed, and RF-integrated circuit applications.</p>

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Effect of Ge Mole Fraction on Performance Characteristics of Si1 – xGex-based Double Gate Field Effect Transistors

  • 期刊论文

  • 发表日期：

    2025年7月14日

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  • Ellapu Bhanu Prakash,
  • Bhukya Harini,
  • Ashok Ray,
  • Sushanta Bordoloi

摘要

Abstract

This paper investigates the direct current (DC) and radio frequency (RF) performance of a double-gate tunnel field-effect transistor (DG-TFET) featuring a Si1 – xGex source, source pocket (SP), and hetero-dielectric gate stack (Hafnium dioxide/Silicon dioxide (HfO2/SiO2)). Using Sentaurus technology computer-aided design (TCAD) simulations, the impact of varying the germanium (Ge) mole fraction (x = 0, 0.2, 0.4, 0.6, and 1) of Silicon1 – xGermaniumx (Si1 – xGex) material in the source region was analyzed. Results reveal that increasing Ge content enhances band-to-band tunneling (BTBT) by reducing the source bandgap, which significantly improves device characteristics. The on-current (Ion) increases by 4.8 times, threshold voltage (Vth) decreases by 22%, and the sub-threshold slope (SS) remains below the 60 mV/decade limit. Additionally, higher Ge mole fractions yield notable improvements in transconductance (gₘ), output conductance (gds), and frequency metrics, with the cut-off frequency (fT) increasing by 2.2 times, and the maximum oscillation frequency (fmax) by 55%. These results demonstrate that the proposed Si1 – xGex DG-TFET is a strong candidate for energy-efficient, high-speed, and RF-integrated circuit applications.