Abstract <p>The downsizing of Field-Effect Transistors (FETs) is driven by the raising need for compact, energy-efficient, and high-performance semiconductor devices. In today’s rapidly advancing technological landscape, the need for more efficient electronic components continues to grow. However, the conventional FET-based devices exhibit several drawbacks such as Short Channel Effects (SCEs), a higher Subthreshold Swing (SS &gt; 60 mV/decade), and excessive power consumption. To combat these limitations, Tunnel Field-Effect Transistors (TFETs) have emerged to be a promising alternative for integrated circuits. Among them, the Junctionless TFET (JLTFET) stands out as an optimal choice for low-power designs owing to its simplified structure, which eliminates the need for complex doping junctions present in conventional MOSFETs and TFETs. This design reduces fabrication complexity and potentially lowers production costs. Their compatibility with alternative materials further expands their potential applications, offering a versatile solution for various electronic devices. JLTFETs also addresses problems such as ambipolar behaviour, lower ON state current, higher leakage current and it holds the promise of improved scalability, enabling the assembly of more circuit elements onto a single chip. This paper offers a comprehensive overview of different JLTFET structures that have emerged over the years, highlighting their similarities and differences. While JLTFET technology is still in its initial stages of advancement, the information presented in this study can serve as a foundation for advancing high-performance JLTFET structures for its potential applications in various fields by shaping the future of electronics filled with smarter, more energy-efficient, and powerful electronic devices.</p>