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Abstract <p>The effect of &#xa0;γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in <i>n</i>-In<sub>0.999</sub>Er<sub>0.001</sub>Se and <i>n</i>-In<sub>0.997</sub>Er<sub>0.003</sub>Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined.</p>

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Effect of γ-Irradiation on Low-Temperature Hopping Conductivity in InSe Single Crystals Doped by Er

  • 期刊论文

  • 发表日期：

    2025年6月18日

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  • A. A. Ismayilov,
  • N. Z. Gasanov,
  • A. A. Ismayilov,
  • P. H. Ismayilova,
  • L. A. Ismayilzada

摘要

Abstract

The effect of  γ-irradiation with a dose of Dγ = 100 krad on the parameters of states localized in the forbidden band in n-In0.999Er0.001Se and n-In0.997Er0.003Se single crystals in the temperature range of 100–300 K was studied. It was found that γ-radiation exposure alters the characteristics of states localized near the Fermi level: a decrease in their density and concentration of deep traps responsible for hopping conductivity, an increase in their energy dispersion and average hopping distance. The radiation-induced defect concentrations in the InSe systems were quantitatively determined.