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Abstract <p>The oxide material in a tunnel FET (TFET) plays an important role in the electrical characteristics of the device. As the device dimensions are diminishing and moving to high-<i>k</i> oxide materials, it is essential to maintain the linearity and reliability of the devices with varying manufacturing and environmental conditions. Therefore, this paper investigates the impact of variation in the material used for the oxide region. The effect is analyzed on analog/RF, structural, and linearity parameters. In this manuscript, the oxide materials are varied, including Al<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub>, HfO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, and ZnO<sub>2</sub>. The proposed device achieves higher ON-current and steeper characteristics, a vertical nanowire TFET with high-<i>k</i> oxide (HKO-VNW-TFET) as the oxide material. Due to its high transconductance and cut-off frequency, the device’s suitability for analog applications has been verified by simulated RF analysis results. In addition, linearity analysis is performed in terms of several FOMs, such as higher-order gm, third-order intermodulation distortion (IMD3), second-order voltage intercept point (VIP2), third-order input intercept point (IIP3), and third-order voltage intercept point (VIP3). This manuscript aims to benefit the semiconductor industry by finding the effect of various oxides and to get a new opportunity by making highly reliable devices using high-<i>k</i> oxide material in devices.</p>

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Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET

  • 期刊论文

  • 发表日期：

    2025年5月13日

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  • Anjana Bhardwaj,
  • Amit Das,
  • Amrita Rai,
  • Ram Krishna,
  • A. K. Upadhyay

摘要

Abstract

The oxide material in a tunnel FET (TFET) plays an important role in the electrical characteristics of the device. As the device dimensions are diminishing and moving to high-k oxide materials, it is essential to maintain the linearity and reliability of the devices with varying manufacturing and environmental conditions. Therefore, this paper investigates the impact of variation in the material used for the oxide region. The effect is analyzed on analog/RF, structural, and linearity parameters. In this manuscript, the oxide materials are varied, including Al2O3, SiO2, HfO2, Si3N4, and ZnO2. The proposed device achieves higher ON-current and steeper characteristics, a vertical nanowire TFET with high-k oxide (HKO-VNW-TFET) as the oxide material. Due to its high transconductance and cut-off frequency, the device’s suitability for analog applications has been verified by simulated RF analysis results. In addition, linearity analysis is performed in terms of several FOMs, such as higher-order gm, third-order intermodulation distortion (IMD3), second-order voltage intercept point (VIP2), third-order input intercept point (IIP3), and third-order voltage intercept point (VIP3). This manuscript aims to benefit the semiconductor industry by finding the effect of various oxides and to get a new opportunity by making highly reliable devices using high-k oxide material in devices.