Abstract <p>In this work, we have studied the influence of pre-deposition temperature (from 600 to 800°C) of PSG (Phosphorous Silicate Glass) layers on the formation of n+/n junction on phosphorus-doped Czochralski silicon (Cz-Si) wafers. Preform sources were used for doping in a quartz tube furnace, with a&#xa0;fixed drive-in temperature at 900°C for 20 min, to produce FSF (Front Surface Field). The latter is achieved by the diffusion of the phosphorus in the PSG layers at different temperatures and drive-in times in an atmosphere of nitrogen and oxygen. The as-deposited PSG layers were analysed using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and Fourier transform infrared spectroscopy (FT-IR). The n+/n junctions formed during a P₂O₅ : O₂ : N₂ pre-deposition process has been characterized by the conventional four point probe (4PP) resistivity method, X-ray photoelectron spectroscopy (XPS), and electrochemical capacitance-voltage technique (ECV). A decrease in surface resistance as the temperature increases was observed, which confirms the increased diffusion of phosphorus into the depth of the samples. FTIR analysis confirmed organic and mineral phosphorous bonds in all samples. XPS analysis indicated the presence of phosphorus in small proportions at several energy levels for samples S1-1 and S2-1, while it diffused completely for Sample S3-1. This proves its complete diffusion after the drive-in step. The phosphorus concentrations and junction depths ranged from 10²¹ to 10²² atoms/cm³ and 0.39 to 0.65 µm, respectively. Moreover, the deeper junction exhibited maximum phosphorus distribution on the surface and peak concentrations were achieved on the junction created at a pre-deposition temperature of 800°C of PSG layer with a&#xa0;fixed drive-in temperature at 900°C for 20 min.</p>