Normally off GaN Transistor for a Complementary Pair

In order to solve the microminiaturization problems and to increase the capacity of devices based on AlGaN/GaN heterostructures, it is necessary to produce monolithic circuits containing digital and analog parts manufactured on a single chip. The most promising method for the formation of a normally off GaN transistor is to use a p-type GaN gate. In this work, the results of simulating normally off n- and p-channel transistors based on a GaN structure with a p-GaN epitaxial layer are presented. A physical analog of the normally off transistor with a p-type gate is calibrated as required by the experiment. It is established that the current–voltage characteristics of simulated transistors differ from the current–voltage characteristics of prototype hardware by no more than 20%. A design of the p-channel transistor is chosen taking into consideration that the threshold voltages of n- and p-channel transistors for a complementary pair should coincide in absolute value –1 V. The possibility of forming a complementary pair for monolithic integrated circuits is shown based on the considered heterostructure with a switching value of 2.7 V.