Calculation of the Efficiency of a Photodiode with Generation and Recombination in the Space-Charge Region

In the design of photodetectors used under external influences, it is necessary to consider changes in the electrical characteristics caused by generation and recombination currents at emerging defects in the crystal lattice. In this work, derivation of the general expression for generation and recombination currents in the space-charge region of a p–n junction is presented. An algorithm for calculating the current–voltage characteristics of photodiodes taking into account generation and recombination processes in the space-charge region of a photodiode and the Poole–Frenkel effect is presented. An algorithm for calculating the efficiency of a photodiode in the presence of defects of various types is designed. The results of calculations which allow assessment of the influence of defects on the electrical characteristics of photodiodes are given.