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Abstract <p>The theoretical framework for MgZnO/ZnO High Electron Mobility Transistors (HEMTs) utilized in Quantum Dot-Based Nanocable Field-Effect Rectifiers (NC-FER) has been constructed using the Parabolic Approximation (PA) method. Our model determines crucial parameters such as lateral electric field, channel potential, transconductance, drain current, noise analysis, and drain current to assess the device’s performance. An evaluation of the noise behaviour is conducted using the Cappy model, which emphasizes the impact of gate length on transconductance. The NC-FER-based HEMTs exhibit a significant drain current of 1.924 A/mm, along with an improved transconductance of&#xa0; 0.096 S/mm. The result indicates that the proposed model is more suitable for RF and low-noise applications.</p>

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Simulation of Quantum Dot Nanocable Rectifiers Integrated with MgZnO/ZnO-based High Electron Mobility Transistors

  • 期刊论文

  • 发表日期：

    2025年7月14日

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  • Vinothkumar Karuppiah,
  • Kaleel Rahuman Abdul Kader

摘要

Abstract

The theoretical framework for MgZnO/ZnO High Electron Mobility Transistors (HEMTs) utilized in Quantum Dot-Based Nanocable Field-Effect Rectifiers (NC-FER) has been constructed using the Parabolic Approximation (PA) method. Our model determines crucial parameters such as lateral electric field, channel potential, transconductance, drain current, noise analysis, and drain current to assess the device’s performance. An evaluation of the noise behaviour is conducted using the Cappy model, which emphasizes the impact of gate length on transconductance. The NC-FER-based HEMTs exhibit a significant drain current of 1.924 A/mm, along with an improved transconductance of  0.096 S/mm. The result indicates that the proposed model is more suitable for RF and low-noise applications.