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Abstract <p>The physical mechanism behind the instability in the electrical performance of SiC-based transistors during the recovery phase has been investigated. It has been found that hot carriers in SiC-based transistors can make a large contribution to the threshold voltage instability via quantum coupling. The experimental results prove that the shifts in threshold voltage are caused by a combination of both de-trapping and temperature relaxation of the hot carriers. This physical model can accurately determine the contributions of de-trapping and temperature relaxation via quantum coupling to the threshold voltage shifts. It is also possible to conclude from this physical model that temperature relaxation via quantum coupling dominates when the recovery time is less than milliseconds, whereas after this time the threshold voltage shifts are governed by a combination of de-trapping and temperature relaxation via quantum coupling. The simplicity and analytical nature of this physical model not only explain the electrical performance but also offer the possibility of optimizing electrical performance by selecting appropriate device physical parameters of SiC-based transistors.</p>

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Physical Modeling of Threshold Voltage Shift during Recovery Phase in SiC-based Transistors

  • 期刊论文

  • 发表日期：

    2025年4月24日

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  • Ling-Feng Mao

摘要

Abstract

The physical mechanism behind the instability in the electrical performance of SiC-based transistors during the recovery phase has been investigated. It has been found that hot carriers in SiC-based transistors can make a large contribution to the threshold voltage instability via quantum coupling. The experimental results prove that the shifts in threshold voltage are caused by a combination of both de-trapping and temperature relaxation of the hot carriers. This physical model can accurately determine the contributions of de-trapping and temperature relaxation via quantum coupling to the threshold voltage shifts. It is also possible to conclude from this physical model that temperature relaxation via quantum coupling dominates when the recovery time is less than milliseconds, whereas after this time the threshold voltage shifts are governed by a combination of de-trapping and temperature relaxation via quantum coupling. The simplicity and analytical nature of this physical model not only explain the electrical performance but also offer the possibility of optimizing electrical performance by selecting appropriate device physical parameters of SiC-based transistors.