Scholarlink

Abstract <p>In this article, the effect of different high-<i>k</i> dielectric passivation layers on the DC characteristics of AlN/β-Ga<sub>2</sub>O<sub>3</sub> based High Electron Mobility Transistor (HEMT) has been investigated. Three high-<i>k</i> dielectric materials namely Si<sub>3</sub>N<sub>4</sub>, Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> are considered for this investigation. The proposed device with different high-<i>k</i> dielectrics are investigated for a number of DC characteristics, including maximum drain current, peak transconductance, I<sub>ON</sub>/I<sub>OFF</sub> ratio, sub-threshold swing (SS), total gate capacitance, and maximum output transconductance using TCAD numerical simulation. Enhanced DC performance in terms of maximum drain current density of 0.8 A/mm, peak transconductance of 0.56 S/mm, overall gate capacitance of 3.4 pF/mm and sub-threshold swing of 36 mV/dec is exhibited by AlN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT for HfO<sub>2</sub> passivation layer as compared to its counterparts. However, I<sub>ON</sub>/I<sub>OFF</sub> ratio is found to be highest, when HfO<sub>2</sub> is used as a high-<i>k</i> dielectric material which corresponds to the high 2-dimensional electron gas (2DEG) carrier density. The obtained results indicate that either HfO<sub>2</sub> or Al<sub>2</sub>O<sub>3</sub> can be the choice of passivation layer in AlN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Investigation of High-k Dielectric Passivation Effects on DC Performance of AlN/β-Ga2O3 HEMTs

  • 期刊论文

  • 发表日期：

    2025年5月13日

查看全文
  • Nabojwal Acharjee,
  • Sarita Singh,
  • Anil Prasad Dadi,
  • Sushanta Bordoloi,
  • Ashok Ray

摘要

Abstract

In this article, the effect of different high-k dielectric passivation layers on the DC characteristics of AlN/β-Ga2O3 based High Electron Mobility Transistor (HEMT) has been investigated. Three high-k dielectric materials namely Si3N4, Al2O3 and HfO2 are considered for this investigation. The proposed device with different high-k dielectrics are investigated for a number of DC characteristics, including maximum drain current, peak transconductance, ION/IOFF ratio, sub-threshold swing (SS), total gate capacitance, and maximum output transconductance using TCAD numerical simulation. Enhanced DC performance in terms of maximum drain current density of 0.8 A/mm, peak transconductance of 0.56 S/mm, overall gate capacitance of 3.4 pF/mm and sub-threshold swing of 36 mV/dec is exhibited by AlN/β-Ga2O3 HEMT for HfO2 passivation layer as compared to its counterparts. However, ION/IOFF ratio is found to be highest, when HfO2 is used as a high-k dielectric material which corresponds to the high 2-dimensional electron gas (2DEG) carrier density. The obtained results indicate that either HfO2 or Al2O3 can be the choice of passivation layer in AlN/β-Ga2O3 HEMT.