Scholarlink

Abstract <p>This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of &#xa0;the <i>n</i>-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes

  • 期刊论文

  • 发表日期：

    2025年6月18日

查看全文
  • Hammouche Khales,
  • Arslane Hatem Kacha,
  • Boudali Akkal,
  • Zineb Benamara

摘要

Abstract

This study investigates the impact of incorporating an ultra-thin GaN interlayer on the electrical properties and conduction mechanisms of Au/GaAs Schottky barrier diodes (SBDs). The GaN interlayer, formed by surface nitridation of  the n-GaAs substrate, significantly enhances the metal/semiconductor interface, leading to enhanced electrical parameters. Experimental methods involved fabricating Au/GaAs and Au/GaN/GaAs diodes and characterizing their current–voltage characteristics at room temperature. Theoretical models, including thermionic, tunnel, generation-recombination, and leakage currents, were applied to simulate the current–voltage characteristics. Results demonstrate that the introduction of the GaN interlayer reduces the ideality factor from 3.28 to 1.76 and increases the barrier height from 0.54 to 0.71 eV. Simulations corroborate experimental findings, revealing that the dominant conduction mechanism in Au/GaAs diodes without passivation involves significant leakage and tunnel currents, whereas the GaN interlayer promotes thermionic conduction. This study provides valuable insights into optimizing Schottky barrier diodes for high-performance applications in high-temperature and high-frequency environments.