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Abstract <p>In the development of thin-film transistors, two key priorities have been set: lowering the gate oxide’s thickness and ensuring an oxide/semiconductor interface with free of defects. To meet the demands of device miniaturization, titanium dioxide (TiO<sub>2</sub>) has become a popular choice as an important high-k dielectric material in metal-oxide-semiconductor (MOS) devices. In spite of its wide bandgap of 3.3 eV, TiO<sub>2</sub> exhibits remarkable dielectric characteristics. Its physical and chemical characteristics are significantly influenced by factors such as crystal phase, particle size, and morphology. This research focuses on the impact of Ni doping in TiO<sub>2</sub> thin films by varying its concentrations for potential applications in future compact devices. X-ray diffraction (XRD), Raman, Atomic force microscopy (AFM), Current-voltage (I-V), and Capacitance-voltage (C-V) measurements were conducted to investigate the consequences of Ni-doped TiO<sub>2</sub> thin film. From the C-V measurements, the dielectric constant, oxide charge density, and interface trap density were calculated. The objective is to develop high-quality Ni-doped TiO<sub>2</sub> thin films with different Ni concentrations, aimed at enhancing the performance of future miniaturized metal oxide semiconductor (MOS) devices.</p>

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Modulation in the Electrical and Microstructural Characteristics of MOS Device using Ni-doped TiO2 thin Film

  • 期刊论文

  • 发表日期：

    2025年4月24日

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  • Prajna Lopamudra,
  • Hara Prasada Tripathy,
  • Sameer Ranjan Biswal,
  • Somesh Sabat,
  • Kiran Kumar Sahoo,
  • Anurag Gartia,
  • Tanmoy Parida,
  • Diana Pradhan

摘要

Abstract

In the development of thin-film transistors, two key priorities have been set: lowering the gate oxide’s thickness and ensuring an oxide/semiconductor interface with free of defects. To meet the demands of device miniaturization, titanium dioxide (TiO2) has become a popular choice as an important high-k dielectric material in metal-oxide-semiconductor (MOS) devices. In spite of its wide bandgap of 3.3 eV, TiO2 exhibits remarkable dielectric characteristics. Its physical and chemical characteristics are significantly influenced by factors such as crystal phase, particle size, and morphology. This research focuses on the impact of Ni doping in TiO2 thin films by varying its concentrations for potential applications in future compact devices. X-ray diffraction (XRD), Raman, Atomic force microscopy (AFM), Current-voltage (I-V), and Capacitance-voltage (C-V) measurements were conducted to investigate the consequences of Ni-doped TiO2 thin film. From the C-V measurements, the dielectric constant, oxide charge density, and interface trap density were calculated. The objective is to develop high-quality Ni-doped TiO2 thin films with different Ni concentrations, aimed at enhancing the performance of future miniaturized metal oxide semiconductor (MOS) devices.