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Abstract <p>The widely used mid-infrared semiconductor lasers are the gallium antimonide lasers, quantum cascade lasers and interband cascade lasers, which are difficult for growth and expensive. In this paper, an InGaAsBi/InAlAs QW structure on InP substrate is proposed for fabricating the mid-infrared lasers. The band structures of InGaAsBi/InAlAs QWs are calculated with different Bi contents and QW thicknesses. The ground state of electrons decreases with Bi contents and increase with QW thicknesses, while the ground states of heavy holes and light holes increase with both Bi contents and QW thicknesses. Light emissions from 1.4 to 4.3 μm can be achieved when the Bi contents varies from 0 to 9% and QW thicknesses varies from 5 to 15 nm. A 3 μm laser is further designed with a 10 nm In<sub>0.53</sub>Ga<sub>0.47</sub>As<sub>0.926</sub>Bi<sub>0.074</sub>/10 nm InAlAs QW acting as the active region, and its performance is simulated at room temperature. Since the heavy hole band is above the light hole band, the TE material gain is dominant. The modal gain exceeds the threshold modal gain of 20.35 cm<sup>–1</sup> at the injected current density of &#xa0;0.2 kA/cm<sup>2</sup>.</p>

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InGaAsBi Quantum Well Lasers on InP for Mid-infrared Lasers

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • Liyao Zhang,
  • Xinyi Zhang,
  • Jianjun Tu,
  • Ding Ma

摘要

Abstract

The widely used mid-infrared semiconductor lasers are the gallium antimonide lasers, quantum cascade lasers and interband cascade lasers, which are difficult for growth and expensive. In this paper, an InGaAsBi/InAlAs QW structure on InP substrate is proposed for fabricating the mid-infrared lasers. The band structures of InGaAsBi/InAlAs QWs are calculated with different Bi contents and QW thicknesses. The ground state of electrons decreases with Bi contents and increase with QW thicknesses, while the ground states of heavy holes and light holes increase with both Bi contents and QW thicknesses. Light emissions from 1.4 to 4.3 μm can be achieved when the Bi contents varies from 0 to 9% and QW thicknesses varies from 5 to 15 nm. A 3 μm laser is further designed with a 10 nm In0.53Ga0.47As0.926Bi0.074/10 nm InAlAs QW acting as the active region, and its performance is simulated at room temperature. Since the heavy hole band is above the light hole band, the TE material gain is dominant. The modal gain exceeds the threshold modal gain of 20.35 cm–1 at the injected current density of  0.2 kA/cm2.